Abstract
We report the observation of incident intensity and applied-field-induced increases in the absorption coefficient of Bi12SiO20 at 514.5 nm. Absorption changes as large as 50% have been observed, but 10% is more typical. The main effect is thermal shifting of the absorption edge caused by ohmic heating from the photocurrent: Δα(T) = 0.0083 cm−1 K−1. In addition, there is a small absorption change proportional to the intensity alone that is approximately given by Δα(I) = 0.03 ln(I). We also report a linear decrease in the photoconductivity with temperature for T in the range 295–330 K.
© 1990 Optical Society of America
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