Abstract

Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm² (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide.

© 1993 Optical Society of America

Polarization dependence of ultrafast nonlinear refraction in an AlGaAs waveguide at the half-band gap

D. C. Hutchings, J. S. Aitchison, B. S. Wherrett, G. T. Kennedy, and W. Sibbett
Opt. Lett. 20(9) 991-993 (1995)

All-optical switching in a nonlinear GaAlAs X junction

J. S. Aitchison, A. Villeneuve, and G. I. Stegeman
Opt. Lett. 18(14) 1153-1155 (1993)

Single-beam squeezed-state generation in semiconductor waveguides with χ⁽³⁾ nonlinearity at below half-band gap

Seng-Tiong Ho, Xiaolong Zhang, and Maria K. Udo
J. Opt. Soc. Am. B 12(9) 1537-1549 (1995)

Optical switching scheme based on the transmission of coupled gap solitons in nonlinear periodic dielectric media

Sangjae Lee and Seng-Tiong Ho
Opt. Lett. 18(12) 962-964 (1993)

Bright solitary pulses in AlGaAs waveguides at half the band gap

C. J. Hamilton, B. Vögele, J. S. Aitchison, G. T. Kennedy, W. Sibbett, W. Biehlig, U. Peschel, T. Peschel, and F. Lederer
Opt. Lett. 21(16) 1226-1228 (1996)