Abstract

The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.

© 1993 Optical Society of America

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, and Ivo Montrosset
Opt. Lett. 18(4) 287-289 (1993)

Switching time in optically bistable injection-locked semiconductor lasers

Dejan M. Gvozdić, Marko M. Krstić, and Jasna V. Crnjanski
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Injection locking and mode switching of a diode laser with a double phase-conjugate mirror

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Observation of optical bistability in a GaAlAs semiconductor laser under intermodal injection locking

Y. Hong and K. A. Shore
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Reconfigurable all-optical bistability/tristability in dual injection-locked Fabry–Perot laser diodes

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Opt. Lett. 48(15) 4165-4168 (2023)