Abstract
The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.
© 1993 Optical Society of America
Full Article | PDF ArticleMore Like This
Rongqing Hui, Sergio Benedetto, and Ivo Montrosset
Opt. Lett. 18(4) 287-289 (1993)
Dejan M. Gvozdić, Marko M. Krstić, and Jasna V. Crnjanski
Opt. Lett. 36(21) 4200-4202 (2011)
Tsutomu Shimura, Masayuki Tamura, and Kazuo Kuroda
Opt. Lett. 18(19) 1645-1647 (1993)