Abstract
An ultrafast, all-silicon light-intensity modulator is proposed. The carrier-refraction effect is used to modulate the refractive index of silicon. An electric-field-induced Bragg reflector on a silicon-on-insulator optical waveguide efficiently converts the small modulation of the index of refraction into light-intensity modulation. A modulator with 300-μm interaction length is expected to have a modulation depth of ∼40% with 5-V bias. Being based on free-carrier depletion, this modulator is expected to have a bandwidth limited only by the RC time constant, which is calculated for a sample device to be ∼40 GHz.
© 1994 Optical Society of America
Full Article | PDF ArticleMore Like This
Stefan F. Preble, Qianfan Xu, Bradley S. Schmidt, and Michal Lipson
Opt. Lett. 30(21) 2891-2893 (2005)
Giuseppe Cocorullo, Mario Iodice, and Ivo Rendina
Opt. Lett. 19(6) 420-422 (1994)
M. P. Nielsen and A. Y. Elezzabi
Opt. Express 21(17) 20274-20279 (2013)