Abstract
The behavior of photocurrents generated in the semiconductors InP:Fe, GaAs:Cr, and undoped GaAs in optical two-wave mixing experiments as a function of the frequency difference between the two waves is characterized and verified experimentally. The sign, the concentration, and the ratio γR/μ of the dominant charge carriers and the effective concentration of trapping centers can be found from this dependence.
© 1994 Optical Society of America
Full Article | PDF ArticleMore Like This
Chen-Chia Wang, Frederic Davidson, and Sudhir Trivedi
J. Opt. Soc. Am. B 14(1) 21-26 (1997)
Frederic Davidson, Chen-Chia Wang, and Sudhir Trivedi
Opt. Lett. 19(11) 774-776 (1994)
Frederic Davidson, Chen-Chia Wang, and Sudhir Trivedi
Opt. Lett. 20(2) 175-177 (1995)