Abstract

We introduce a new low-loss semiconductor structure for femtosecond intracavity mode locking in low-gain solid-state lasers. This monolithic device can be engineered to exhibit specific saturation characteristics desirable for mode locking solid-state lasers. Self-starting 90-fs pulses are obtained with Ti:sapphire and diode-pumped Cr:LiSAF lasers. We discuss mode-locking mechanisms in quantum-well passively mode-locked solid-state lasers.

© 1995 Optical Society of America

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