Abstract
Silicate-based glasses containing approximately 10% by weight boron or more have been observed to exhibit selective etching in hydrofluoric acid solution after direct exposure to intense visible laser light at 532 nm. The observation of a ring-shaped etch pattern in samples exposed to solid Gaussian beams suggests that selective etching is related to a charge-diffusion process rather than to local light-induced defect generation. The technique has so far resulted in the maskless production of micrometer-scale features with submicrometer depths.
© 1995 Optical Society of America
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