Abstract
Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of in the Franz–Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches .
© 1999 Optical Society of America
Full Article | PDF ArticleMore Like This
S. Iwamoto, S. Taketomi, H. Kageshima, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda
Opt. Lett. 26(1) 22-24 (2001)
D. D. Nolte, D. H. Olson, G. E. Doran, W. H. Knox, and A. M. Glass
J. Opt. Soc. Am. B 7(11) 2217-2225 (1990)
Q. Wang, R. M. Brubaker, D. D. Nolte, and M.R. Melloch
J. Opt. Soc. Am. B 9(9) 1626-1641 (1992)