Abstract
We report for what is believed to be the first time planar waveguide formation and propagation mode reduction in crystal, which were achieved by 3.0-MeV silicon-ion implantation followed by annealing under specific conditions. After the implantation, an enhanced refractive-index region was formed with a width of beneath the sample surface to act as a waveguide structure. We found that there were four propagation modes for the as-implanted waveguide, whereas after annealing at 240–360 °C for several hours the number of modes could be reduced to three, two, and one. After annealing at 400 °C for 1 h the monomode waveguide was destroyed completely, and no mode was observed in the sample.
© 2002 Optical Society of America
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