Abstract

An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.

© 2002 Optical Society of America

Line narrowing and hole burning within the homogeneous linewidth: a new wave-mixing effect in two-level systems

J. Förstner, A. Knorr, M. Lindberg, and S. W. Koch
Opt. Lett. 27(20) 1830-1832 (2002)

Polarization decay in ultrafast collinear nondegenerate four-wave mixing in a semiconductor amplifier

S. Hughes
Opt. Lett. 23(12) 948-950 (1998)

Spectral hole burning measurement thulium-doped fiber amplifiers

Fabien Roy, Dominique Bayart, Céline Heerdt, André Le Sauze, and Pascal Baniel
Opt. Lett. 27(1) 10-12 (2002)

Intraband carrier kinetics and picosecond pulse shaping in field-enhanced bulk semiconductor absorbers

A. V. Uskov, J. McInerney, J. R. Karin, and J. E. Bowers
Opt. Lett. 23(5) 376-378 (1998)

Persistent spectral-hole burning in the wide-gap semiconductor SiC doped with vanadium

R. Kummer, C. Hecht, and A. Winnacker
Opt. Lett. 22(12) 916-918 (1997)