Abstract
A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the -doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.
© 2003 Optical Society of America
Full Article | PDF ArticleCorrections
Laurent Vaissié, Waleed Mohammed, and Eric G. Johnson, "Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes: erratum," Opt. Lett. 28, 1280-1280 (2003)https://opg.optica.org/ol/abstract.cfm?uri=ol-28-14-1280
More Like This
Laurent Vaissié, Waleed Mohammed, and Eric G. Johnson
Opt. Lett. 28(14) 1280-1280 (2003)
Shyam K. Mandre, Ingo Fischer, and Wolfgang Elssser
Opt. Lett. 28(13) 1135-1137 (2003)
Jason K. O'Daniel, Oleg V. Smolski, M. G. Moharam, and Eric G. Johnson
Opt. Lett. 31(2) 211-213 (2006)