Abstract

We report $n_2$ measurements of selected chalcogenide glasses using a modified Z-scan technique. Measurements were made with picosecond pulses emitted by a $10\mathrm{Hz}$ Q-switched, mode-locked Nd:YAG laser at $1064\mathrm{nm}$ under conditions suitable to characterize ultrafast nonlinearities. The nonlinear index increases significantly up to 246 times the $n_2$ for fused silica with an increase of $\mathrm{Sb}{\mathrm{S}}_3$ units and also very slightly with the replacement of Ge by Ga or S by Se. We have attributed the variation of $n_2$ to the total number of electronic lone pairs and to the position of the absorption band gap, which are induced by the presence of $\mathrm{Ga}{\mathrm{S}}_4$ units or Se―Se bonds in the glass structure.

© 2006 Optical Society of America

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