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High-power GaN diode-pumped continuous wave Pr 3 + -doped Li Y F 4 laser

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Abstract

A cw Pr3+:LiYF4 laser at 639nm pumped by a high-power GaN laser diode (444nm) is demonstrated. The highest laser power of 112mW is achieved with an optical–optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

© 2007 Optical Society of America

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