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Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

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Abstract

The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ=1669  nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of 420.

© 2010 Optical Society of America

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