Abstract
We report modulation of the absorption coefficient at in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew -thick Ge quantum wells on a relaxed buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range .
© 2011 Optical Society of America
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