Abstract

We report the synthesis, fabrication, and testing of a $320\times 256$ focal plane array (FPA) of back-illuminated, solar-blind, $p\text{-}i\text{-}n$, ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$–based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by $\sim 285\mathrm{nm}$. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of $75\mathrm{mA}/\mathrm{W}$, which corresponds to an EQE of $\sim 37\%$. Finally, the uniformity of the FPA and imaging properties are investigated.

©2012 Optical Society of America

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