Abstract

A visible-blind UV photodetector (PD) using a double heterojunction of $\mathrm{n}\text{-}\mathrm{ZnO}/{\mathrm{LaAlO}}_3(\mathrm{LAO})/\mathrm{p}\text{-}\mathrm{Si}$ was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from $\mathrm{p}\text{-}\mathrm{Si}$ to $\mathrm{n}\text{-}\mathrm{ZnO}$, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the $\mathrm{n}\text{-}\mathrm{ZnO}/\mathrm{LAO}/\mathrm{p}\text{-}\mathrm{Si}$ PDs due to the high potential barrier between LAO and $\mathrm{p}\text{-}\mathrm{Si}$ layers ($\sim 2.0\mathrm{eV}$). These results support the use of $\mathrm{n}\text{-}\mathrm{ZnO}/\mathrm{LAO}/\mathrm{p}\text{-}\mathrm{Si}$ PDs in the visible-blind UV PDs in a visible-light environment.

©2012 Optical Society of America

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