Abstract

The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron–hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.

©2012 Optical Society of America

Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration

Jih-Yuan Chang, Fang-Ming Chen, Yen-Kuang Kuo, Ya-Hsuan Shih, Jinn-Kong Sheu, Wei-Chih Lai, and Heng Liu
Opt. Lett. 38(16) 3158-3161 (2013)

Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers

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Advantages of blue InGaN light-emitting diodes with AlGaN barriers

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Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

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Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

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