Abstract

Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous ${\mathrm{SiO}}_{0.73}$ thin films doped with Bi ions. It exhibited highly improved ${\sigma }_{em}\times \tau$ of up to $4.2\times {10}^{-23}{\mathrm{cm}}^2\mathrm{s}$ and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration.

© 2016 Optical Society of America

Sensitized broadband near-infrared luminescence from bismuth-doped silicon-rich silica films

Yuji Miwa, Hong-Tao Sun, Kenji Imakita, Minoru Fujii, Yu Teng, Jianrong Qiu, Yoshio Sakka, and Shinji Hayashi
Opt. Lett. 36(21) 4221-4223 (2011)

Efficient near-infrared emission from neodymium by broadband sensitization of bismuth in zeolites

Zhenhua Bai, Minoru Fujii, Yuki Mori, Yuji Miwa, Minoru Mizuhata, Hong-Tao Sun, and Shinji Hayashi
Opt. Lett. 36(6) 1017-1019 (2011)

Highly efficient near-infrared emission in Er³⁺ doped silica films containing size-tunable SnO₂ nanocrystals

Xiaowei Zhang, Tao Lin, Pei Zhang, Jun Xu, Shaobing Lin, Ling Xu, and Kunji Chen
Opt. Express 22(1) 369-376 (2014)

Enhanced photoluminescence properties of bismuth sulfide nanocrystals with core-shell Ag@SiO₂

Manli Peng, Gang Bi, Chunfeng Cai, Guanxing Guo, Huizhen Wu, and Zhousu Xu
Opt. Lett. 41(7) 1466-1469 (2016)

Near-infrared photoresponse of femtosecond-laser processed Se-doped silicon n⁺ − n photodiodes

Lingyan Du, Zhiming Wu, Rui Li, Fei Tang, and Yadong Jiang
Opt. Lett. 41(21) 5031-5034 (2016)