Abstract
We detail the operation of a THz laser source based on non-linear stimulated polariton scattering (SPS) in . This system utilizes a fundamental wavelength of 1342 nm to completely avoid the negative effect of free-carrier generation within high-resistivity silicon (Si) prisms used to extract THz radiation from the crystal. THz power of up to 23.6 μW (62.3 μW when chopped at 50% duty cycle) was detected at 1.33 THz, and frequency tunability across the range 1.05–2.2 THz was achieved.
© 2017 Optical Society of America
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