Abstract

We demonstrate a four-stage silicon distributed traveling-wave photodetector (TWPD) whose input terminal is open-circuit so as to enhance the radio-frequency (RF) output power. In order to mitigate the bandwidth drop caused by the RF reflection at the open input terminal, photodetector (PD) units are aperiodically loaded on the TW electrode. With the aid of an equivalent circuit model, we optimize spacings between PD units and then improve the 3 dB bandwidth from 7 to 10 GHz. A good agreement between measurement and modeling is obtained. Thanks to the cancellation of the input termination impedance, maximum RF output powers of the device are 10.2 and 6.5 dBm at 5 and 10 GHz, respectively. The corresponding power conversion efficiencies are 7.0% and 3.2%.

© 2019 Optical Society of America

Silicon-based high-power traveling wave photodetector with inductive gain peaking

Zhujun Wei, Hui Yu, Zhilei Fu, Penghui Xia, Qiang Zhang, Nannan Ning, Qikai Huang, Yuehai Wang, and Jianyi Yang
Opt. Express 30(26) 46094-46105 (2022)

High-power dual-fed traveling wave photodetector circuits in silicon photonics

Chia-Ming Chang, Jeffrey H. Sinsky, Po Dong, Guilhem de Valicourt, and Young-Kai Chen
Opt. Express 23(17) 22857-22866 (2015)

Integrated high-power germanium photodetectors assisted by light field manipulation

Yan Zuo, Yu Yu, Yu Zhang, De Zhou, and Xinliang Zhang
Opt. Lett. 44(13) 3338-3341 (2019)

High-speed and high-power germanium photodetector based on a trapezoidal absorber

Yupeng Zhu, Zhi Liu, Chaoqun Niu, Yaqing Pang, Diandian Zhang, Xiangquan Liu, Jun Zheng, Yuhua Zuo, Haiyun Xue, and Buwen Cheng
Opt. Lett. 47(13) 3263-3266 (2022)

Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors

Matthew J. Byrd, Erman Timurdogan, Zhan Su, Christopher V. Poulton, Nicholas M. Fahrenkopf, Gerald Leake, Douglas D. Coolbaugh, and Michael R. Watts
Opt. Lett. 42(4) 851-854 (2017)