Abstract
Electromagnetic-structure-resonance enhancement of scattering from Si phonon modes is reported for a number of submicrometer structures. Enhancements of ≳100 over the Raman intensity from bulk Si are observed for ~0.1-μm-diameter Si spheres. An analytic calculation of the Raman intensity for this geometry is in good qualitative agreement with the experiment and demonstrates that the enhancement arises from the coupling of both the incident and the scattered fields with the low-order-structure resonances in this high-index dielectric.
© 1983 Optical Society of America
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