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Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon

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Abstract

Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm-thick, single-crystal layer of Ge0.1Si0.9 grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.

© 1990 Optical Society of America

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